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Transphorm Inc   (TGAN)
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    Sector  Technology    Industry Semiconductors
   Industry Semiconductors
   Sector  Technology
 
Price: $4.8000 $-0.01 -0.208%
Day's High: $4.835 Week Perf: -1.64 %
Day's Low: $ 4.80 30 Day Perf: -1.64 %
Volume (M): 236 52 Wk High: $ 4.96
Volume (M$): $ 1,133 52 Wk Avg: $3.52
Open: $4.82 52 Wk Low: $1.94



 Market Capitalization (Millions $) 298
 Shares Outstanding (Millions) 62
 Employees 108
 Revenues (TTM) (Millions $) 17
 Net Income (TTM) (Millions $) -40
 Cash Flow (TTM) (Millions $) -16
 Capital Exp. (TTM) (Millions $) 2

Transphorm Inc
We are a multinational semiconductor firm that was established in 2007. We are a market and technical leader in the field of wide-bandgap GaN power electronics for high voltage power conversion applications. We provide an expanding client base with high quality and dependable GaN devices with excellent performance, as well as application design support. Our GaN devices enable customers to design smaller, lighter, and cooler power systems, resulting in increased functional value in end products such as smartphone power adapters/fast chargers, datacenter server/communication power supplies, industrial power converters, and chargers/converters/inverters for electric vehicles, among other applications.
We deploy our unique vertically integrated innovation model that leverages one of the industry's most experienced GaN engineering teams (with over 300 years of combined experience) at every development stage: device design, materials growth, device fabrication, packaging, circuits and application support. This approach, backed by one of the GaN power industry's largest intellectual property portfolios with access to over 1,000 world-wide patents, has yielded the industry's first automotive-grade AEC-Q101 and JEDEC qualified high voltage GaN FETs. Our innovations are designed to move power electronics beyond the limitations of silicon and provide our customers with higher efficiency or lower loss (e.g., titanium-class performance in power supplies), higher power density (e.g., compact size or improved form factor) and, in many designs, an overall lower system cost.
Driving 'Moore's law of Power' with GaN: At the core of any power converter or inverter widely utilized in converting electrical energy from one form to another (for example, AC to DC), are semiconductor-based electronic switches, traditionally made with silicon-based devices. While silicon and silicon-based switching transistors like MOSFETs and IGBTs are reaching their technological limits, GaN FETs have significant potential for performance to further the roadmap for power conversion systems that require ever increasing power density (ability to pack power in a small volume), analogous to Moore's law for digital semiconductors. In this case, the 'Moore's law' analogy is the increasing power density over time, which has been achieved via improvements in switching devices, starting with SCRs, then BJTs, followed by IGBTs and MOSFETs, all of which are silicon-based devices. Relative to silicon-based devices, GaN devices offer advantages including higher switching speeds, higher breakdown voltages and lower resistance. Today, wide-bandgap semiconductors like SiC and GaN are driving the innovation in power electronics.

Our GaN FETs: Our proprietary GaN on silicon material growth (or epiwafer technology) knowhow via MOCVD allows us to build our GaN devices on inexpensive silicon substrates, thereby leveraging the cost structure of well-established silicon-based manufacturing. Our proprietary GaN epiwafer designs also allow us to achieve devices capable of sustaining high voltages well in excess of the 650 Volts required for typical power switching applications, with ultra-low losses. At the core of our GaN FET device is a two-chip, normally-off 650 Volt GaN platform, integrating a low voltage Si FET input/drive stage with a high voltage GaN output stage to deliver a normally-off, packaged power device to the end user. Compared to other approaches by which a normally-off, high voltage GaN switching device can be made, our approach is more robust than other alternatives (so-called junction gated or p-GaN type devices) that typically offer low safety margins. A typical standard Si-MOSFET consists of a normally-off input portion (gate control) with a normally-on output portion (high voltage drift region), that are integrated in one device. We have integrated two separate die in one package in a chip-on-chip configuration to achieve the best of both worlds - high robustness and high performance. The result is a normally-off power device package with a combination of reliability, robustness, design margin and performance. We believe the adoption of this approach by other GaN manufacturers makes our strong intellectual property even more important going forward. Our GaN FETs stand out in the industry due to their capability to withstand much higher voltages than those required for device ratings (for instance, our standard 650 Volt products have a destructive breakdown voltage in excess of 1,000 Volts, which we believe is high in comparison to the typical range for our competitors' GaN devices of 650 Volts to 1,000 Volts), contributing to our safety margins in operation.


   Company Address: 75 Castilian Drive Goleta, 93117 CA
   Company Phone Number: 456-1300   Stock Exchange / Ticker: NASDAQ TGAN
   


Customers Net Income fell by TGAN's Customers Net Profit Margin fell to

-40.6 %

5.87 %

• Customers Performance • Customers Expend. • Customers Efficiency • List of Customers


   

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Transphorm Inc

Transphorm Inc's GaN Power Systems Face Soft Top-line for Fiscal Q3 2024

Transphorm Inc, a global leader in GaN (Gallium Nitride) power systems, has reported its financial results for the third quarter of its fiscal year ending March 31, 2024. The company experienced a shortfall per share of $-0.20, an increase from $-0.18 in the previous year and $-0.12 in the previous reporting season.
In terms of revenue, Transphorm Inc experienced a decrease of -5.911% to $4.08 million compared to $4.33 million in the corresponding reporting season a year ago. Sequentially, revenue decreased by -2.372% from $4.17 million. However, it's worth noting that the net shortfall for the financial period ending December 31, 2023, was $-2.721 million, a significant improvement from the deficit of $-20.920 million in the same reporting season a year ago.

Transphorm Inc

Transphorm Inc Surges with Impressive Revenue Growth in Q2 2024

Transphorm Inc, a leading semiconductor company, recently released its financial report for the second quarter of 2024, showcasing a significant surge in revenue by 21.408% to $4.17 million compared to the corresponding period last year. However, it is important to note that the company also experienced a swelled deficit at $-0.12 per share. This is an improvement from the preceding period where earnings per share (EPS) improved from $-0.22 per share but revenue fell by -17.964% from $5.09 million.
During the period from July to September 2023, Transphorm Inc reported a net deficit of $-14.258 million, which was higher than the $-11.990 million reported a year ago. Another noticeable trend in the financial report was the increase in inventories, reaching a level of $9.8 million compared to the preceding quarter and the corresponding quarter a year ago. It is worth mentioning that the company saw a decline in accounts receivable to $4.6 million from the previous quarter, although it is still higher than the same period last year.

Transphorm Inc

Transphorm Inc Faces Increasing Diminishing Returns in Recent Fiscal Interval Closure on June 30, 2023


As a Financial Analyst for the Wall Street Journal, I have closely examined the most recent financial performance of Transphorm Inc, and the results provide both reasons for concern and signs of potential growth.
The fiscal interval closing June 30, 2023, proved to be challenging for Transphorm Inc, as deteriorating orders resulted in losses. Revenue fell by 0.353% to $5.09 million compared to the previous year, signaling a downturn in sales. Additionally, the deficit per share increased to $-0.22 in contrast to $-0.10 per share reported in the same quarter last year, indicating increased losses for shareholders.






 

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