| Market Capitalization (Millions $) |
1,039 |
| Shares
Outstanding (Millions) |
39 |
| Employees |
2,371 |
| Revenues (TTM) (Millions $) |
713 |
| Net Income (TTM) (Millions $) |
-1,583 |
| Cash Flow (TTM) (Millions $) |
-579 |
| Capital Exp. (TTM) (Millions $) |
1,277 |
Business Description
Wolfspeed, Inc. is an innovator of wide bandgap semiconductors, focused on Silicon Carbide and gallium nitride (GaN) materials and devices for power and radio-frequency (RF) applications. Our product families include Silicon Carbide and GaN materials, power devices and RF devices, and our products are targeted for various applications such as electric vehicles, fast charging, 5G, renewable energy and storage, and aerospace and defense.
Silicon Carbide and GaN Materials
Our Silicon Carbide materials products consist of Silicon Carbide bare wafers, epitaxial wafers, and GaN epitaxial layers on Silicon Carbide wafers. Our Silicon Carbide materials are targeted for customers who use them to manufacture products for RF, power and other applications. Corporate, government and university customers also buy Silicon Carbide and GaN materials for research and development directed at RF and power devices.
Power Devices
Our power device products consist of Silicon Carbide Schottky diodes, metal oxide semiconductor field effect transistors (MOSFETs) and power modules. Our Silicon Carbide power products provide increased efficiency and faster switching speeds and as a result, reduced system size and weight over comparable silicon power devices. Power products are sold to customers and distributors for use in applications such as electric vehicles, including charging infrastructure, server power supplies, solar inverters, uninterruptible power supplies, industrial power supplies and other applications.
RF Devices
Our RF devices consist of GaN-based die, high-electron mobility transistors (HEMTs), monolithic microwave integrated circuits (MMICs), and laterally diffused MOSFET (LDMOS) power transistors that are optimized for next generation telecommunications infrastructure, military and other commercial applications. Our RF devices are made from silicon, Silicon Carbide and GaN and can provide improved efficiency, bandwidths and frequency of operation as compared to silicon or gallium arsenide (GaAs). We also provide custom die manufacturing for GaN HEMTs and MMICs that allow a customer to design its own custom RF circuits to be fabricated by us, or have us design and fabricate products that meet their specific requirements.
Company Address: 4600 Silicon Drive Durham 27703 NC
Company Phone Number: 407-5300 Stock Exchange / Ticker: NYSE WOLF
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